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v00.0903
MICROWAVE CORPORATION
HMC499
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 21 - 32 GHz
Features
+33 dBm Output IP3 +24 dBm P1dB Gain: 16 dB Supply Voltage: +5.0 V 50 Ohm Matched Input/Output 2.11 mm x 1.46 mm x 0.1 mm
1
AMPLIFIERS - CHIP
Typical Applications
The HMC499 is ideal for use as a power amplifier for: * Point-to-Point Radios * Point-to-Multi-Point Radios * VSAT * Military & Space
Functional Diagram
General Description
The HMC499 is a high dynamic range GaAs PHEMT MMIC Medium Power Amplifier which operates between 21 and 32 GHz. The HMC499 provides 16 dB of gain, and an output power of +24 dBm at 1 dB compression from a +5.0 V supply voltage. The HMC499 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).
Electrical Specifications, TA = +25 C, Vdd = 5V, Idd = 200 mA*
Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.) 20 13 Min. Typ. 21.0 - 24.0 16 0.03 10 13 23 24 30 6.5 200 20 0.04 12.5 Max. Min. Typ. 24.0 - 28.0 15.5 0.03 5 12 24 24.5 33 5.0 200 21 0.04 12 Max. Min. Typ. 28.0 - 32.0 15 0.03 8 12 24.5 25 33.5 4.5 200 0.04 Max. Units GHz dB dB/ C dB dB dBm dBm dBm dB mA
* Adjust Vgg between -2 to 0V to achieve Idd = 200 mA typical. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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v00.0903
MICROWAVE CORPORATION
HMC499
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 21 - 32 GHz
GaAs MMIC SUB-HARMONICALLY Gain vs. Temperature PUMPED MIXER Broadband Gain & Return Loss
20 15 10 RESPONSE (dB)
S21 S22
17 - 25 GHz
22 20 18 16 GAIN (dB) 14 12 10 8 6 4 2 0 18 20 22 24 26 28 30 32 34 36 20 21 22 23 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz) FREQUENCY (GHz)
+25 C +85 C -55 C
1
AMPLIFIERS - CHIP
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5 0 -5 -10 -15 -20
S11
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
+25 C +85 C -55 C
RETURN LOSS (dB)
-10
RETURN LOSS (dB) 31 32 33
-5
-5
-10
-15
+25 C +85 C -55 C
-15
-20 20 21 22 23 24 25 26 27 28 29 30 FREQUENCY (GHz)
-20 20 21 22 23 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz)
P1dB vs. Temperature
30 28 26 24 P1dB (dBm) 22 20 18 16 14 12 10 20 21 22 23 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz)
+25 C +85 C -55 C
Psat vs. Temperature
30 28 26 24 Psat (dBm) 22 20 18 16 14 12 10 20 21 22 23 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz)
+25 C +85 C -55 C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0903
HMC499
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 21 - 32 GHz
1
AMPLIFIERS - CHIP
Output IP3 vs. Temperature
40 38 36
Noise Figure vs. Temperature
12 11 10 NOISE FIGURE (dB) 9 8 7 6 5 4 3 2 1 0
+25 C +85 C -55 C
34 OIP3 (dBm) 32 30 28 26 24 22 20 20 21 22 23 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz)
+25 C +85 C -55 C
20
21 22 23
24 25 26
27
28 29 30
31 32
33
FREQUENCY (GHz)
Gain & Power vs. Supply Voltage@ 30 GHz, Idd= 200 mA
28 GAIN (dB), P1dB (dBm), Psat (dBm) 26
Reverse Isolation vs. Temperature
0 -10
+25 C +85 C -55 C
24 ISOLATION (dB)
Gain P1dB Psat
22 20 18 16 14 12 10 3 3.5 4 4.5 5 5.5 Vdd Supply Voltage (Vdc)
-20 -30 -40 -50 -60 20 21 22 23 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz)
Power Compression @ 22 GHz
28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -10 Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm) Gain (dB) PAE (%)
Power Compression @ 30 GHz
28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -10 Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm) Gain (dB) PAE (%)
-8
-6
-4
-2
0
2
4
6
8
10
12
14
-8
-6
-4
-2
0
2
4
6
8
10
12
INPUT POWER (dBm)
INPUT POWER (dBm)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0903
HMC499
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 21 - 32 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) Gate Bias Voltage (Vgg) RF Input Power (RFin)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 C) (derate 25 mW/C above 85 C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +5.5 Vdc -4.0 to 0 Vdc +20 dBm 175 C 2.25 W
Typical Supply Current vs. Vdd
Vdd (Vdc) +4.5 +5.0 +5.5 +3.0 +3.5 Idd (mA) 193 200 207 191 200 208
1
AMPLIFIERS - CHIP
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40 C/W -65 to +150 C -55 to +85 C
+4.0
Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 200 mA at +5.0V and +3.5V.
Outline Drawing
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004" 3. TYPICAL BOND IS .004" SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0903
HMC499
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 21 - 32 GHz
1
AMPLIFIERS - CHIP
Pad Descriptions
Pin Number Function Description This pad is AC coupled and matched to 50 Ohms from 21 - 32 GHz. Interface Schematic
1
RF IN
2-4
Vdd1, 2, 3
Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.01 F are required.
5
RF OUT
This pad is AC coupled and matched to 50 Ohms from 21 - 32 GHz.
6
Vgg
Gate control for amplifier. Adjust to achieve Idd of 200 mA. Please follow "MMIC Amplifier Biasing Procedure" Application Note. External bypass capacitors of 100 pF and 0.01 F are required.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0602
HMC499
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 17 - 24 GHz
Assembly Diagram
1
AMPLIFIERS - CHIP
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
1 - 125
MICROWAVE CORPORATION
v00.0903
HMC499
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 21 - 32 GHz
1
AMPLIFIERS - CHIP
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical dieto-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
1 - 126
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0903
HMC499
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 21 - 32 GHz
Handling Precautions
Follow these precautions to avoid permanent damage.
1
AMPLIFIERS - CHIP
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Cleanliness:
Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > 250V ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com

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